| E-beam Lithographic Systems (CMC Microsystems) | |
| Bid #: | Q-2012-33-KM |
| Published By: | Queen's University |
| Bid Type: | Invitation(Open)
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| Value Range: | Not Available |
| Bid Closing Date: | 06/06/2012 12:00:00 PM ET |
| Bid Status: | Awarded |
Queen's University E-beam Lithographic Systems (CMC Microsystems) Q-2012-33-KM Closing Date: 06/06/2012 12:00:00 PM ET Details: This RFP is an invitation to submit non-binding offers for the provision of two E-beam Lithographic Systems for academic research use. The e-beam lithographic systems are to support a number of research topic areas, including micro-electromechanical systems (MEMS), microfluidics, photonics, microelectronics, embedded systems/software and novel, nano-scale devices. The system will have the capabilities to make photomasks, fabricate low-volumes of semiconductor components, and create nanometer size architectures. In total, 2 E-beam lithography systems will be installed in the following 2 universities: École Polytechnique de Montréal and Queen’s university. The specifications of the two systems are slightly different recognizing the variety of research topics and applications and a small degree of specialization in functionality at each institution. Proponents are invited to bid on one or both systems. Preference is given to proponents who can provide both systems. For the system to be installed at École Polytechnique de Montréal, only proposals for integrated systems (e-beam and stage) will be assessed against the rated criteria. A proponent with several system models or configurations which each satisfy a majority of the specifications is encouraged to provide a quotation on each system so that the bid review committee can assess a number of scenarios. Immediately below are the specifications for the system planned for École Polytechnique de Montréal. Acceleration Voltage: 100 eV to at least 30 ekV (variable) System Accuracy: Minimum line width: 10nm or better Stitching resolution: 40nm or better Overlay resolution: 40nm or better Electron Beam: Beam Size: 2nm or less Beam Current Stability: 0.5%/8h or better Beam position Stability: 300nm /h or better Beam positioning accuracy: 0.5nm or better Minimum feature size: 10nm line width or better Write field size: 500nm to 2mm, continuous variable Software: Operation system: Microsoft Windows based Multi-user capability Proximity effect correction function ) Drawing editor Design file format supported: GDSII, capable of importing files in AutoCAD DXF, ASCII, CIF, DWG format Samples handling: Load lock Able to handle small samples with random geometry 4 inch wafer holder Working stage: Computer controlled X, Y, Z stage Stage displacements range: 100mm x 100mm (X x Y) or larger X, Y position resolution: 2nm or less Alignment: The in situ electron microscopy should be able to register alignment coordinates on sample prior to resist coating Other features: Additional software licences at no extra cost Secondary electron imaging resolution over 1keV -30keV accelerating voltage: 2nm or better Retroaction system for sample height variation detection and self- adjustment Anti-vibration table Integrated metrology tool Power surge protection Acceleration voltage up to 50k Solid state chiller Fixed beam lithography module 100 mm mask holder Automated height sensing Immediately below are the specifications for the system planned for Queen’s University. Acceleration Voltage: 100 eV to at least 30keV in 10V steps System Accuracy: Minimum line width: 20nm or better Stitching resolution: 60nm or better Overlay resolution: 60nm or better Electron Beam: Beam Size: 2.5nm or less Beam current stability: 0.5%/h or less Beam position Stability: 400nm /h or better Beam positioning method: 16 bit or better Beam positioning accuracy: 0.5nm or less Minimum feature size: 20nm line width or less Minimum grating periodicity: 60nm or less Write field size: 500nm to 2mm, continuous variable Software: Operation system: Microsoft Windows based Multi-user capability Proximity effect correction function Design file editor and viewer Design file format: GDSII, capable of importing files in AutoCAD DXF, ASCII, CIF, DWG format Samples handling: Able to handle small samples with random geometry 2 inch wafer holder Working stage: Computer controlled X, Y, Z stage Stage displacements range: 50mm x 50mm (X x Y) or larger X, Y position resolution: 2nm or less Rotation(360 degree)-tilt(90 degree) function for inspection purposes Other features: Additional software licence Secondary electron imaging resolution over 1keV -30keV accelerating voltage: 2nm or better Retroaction system for sample height variation detection and self adjustment Vibration mitigation/isolation/cancellation system Integrated metrology tool Power surge protection Detector for imaging and alignment mark recognition Load lock Automated height Sensing Able to register alignment coordinates prior to resist coating using in situ microscopy Integrated system (e-beam, stage) preference |
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