Queen's University E-beam Lithographic Systems (CMC Microsystems) Q-2012-33-KM Closing Date: 06/06/2012 12:00:00 PM ET Details: This RFP is an invitation to submit non-binding offers for the provision of two E-beam Lithographic Systems for academic research use. The e-beam lithographic systems are to support a number of research topic areas, including micro-electromechanical systems (MEMS), microfluidics, photonics, microelectronics, embedded systems/software and novel, nano-scale devices. The system will have the capabilities to make photomasks, fabricate low-volumes of semiconductor components, and create nanometer size architectures. In total, 2 E-beam lithography systems will be installed in the following 2 universities: École Polytechnique de Montréal and Queen’s university.
The specifications of the two systems are slightly different recognizing the variety of research topics and applications and a small degree of specialization in functionality at each institution. Proponents are invited to bid on one or both systems. Preference is given to proponents who can provide both systems.
For the system to be installed at École Polytechnique de Montréal, only proposals for integrated systems (e-beam and stage) will be assessed against the rated criteria.
A proponent with several system models or configurations which each satisfy a majority of the specifications is encouraged to provide a quotation on each system so that the bid review committee can assess a number of scenarios.
Immediately below are the specifications for the system planned for École Polytechnique de Montréal.
Acceleration Voltage: 100 eV to at least 30 ekV (variable)
System Accuracy:
Minimum line width: 10nm or better
Stitching resolution: 40nm or better
Overlay resolution: 40nm or better
Electron Beam:
Beam Size: 2nm or less
Beam Current Stability: 0.5%/8h or better
Beam position Stability: 300nm /h or better
Beam positioning accuracy: 0.5nm or better
Minimum feature size: 10nm line width or better
Write field size: 500nm to 2mm, continuous variable
Software:
Operation system: Microsoft Windows based
Multi-user capability
Proximity effect correction function )
Drawing editor
Design file format supported: GDSII, capable of importing files in AutoCAD DXF, ASCII, CIF, DWG format
Samples handling:
Load lock
Able to handle small samples with random geometry
4 inch wafer holder
Working stage:
Computer controlled X, Y, Z stage
Stage displacements range: 100mm x 100mm (X x Y) or larger
X, Y position resolution: 2nm or less
Alignment:
The in situ electron microscopy should be able to register alignment coordinates on sample prior to resist coating
Other features:
Additional software licences at no extra cost
Secondary electron imaging resolution over 1keV -30keV accelerating voltage: 2nm or better
Retroaction system for sample height variation detection and self- adjustment
Anti-vibration table
Integrated metrology tool
Power surge protection
Acceleration voltage up to 50k
Solid state chiller
Fixed beam lithography module
100 mm mask holder
Automated height sensing
Immediately below are the specifications for the system planned for Queen’s University.
Acceleration Voltage: 100 eV to at least 30keV in 10V steps
System Accuracy:
Minimum line width: 20nm or better
Stitching resolution: 60nm or better
Overlay resolution: 60nm or better
Electron Beam:
Beam Size: 2.5nm or less
Beam current stability: 0.5%/h or less
Beam position Stability: 400nm /h or better
Beam positioning method: 16 bit or better
Beam positioning accuracy: 0.5nm or less
Minimum feature size: 20nm line width or less
Minimum grating periodicity: 60nm or less
Write field size: 500nm to 2mm, continuous variable
Software:
Operation system: Microsoft Windows based
Multi-user capability
Proximity effect correction function
Design file editor and viewer
Design file format: GDSII, capable of importing files in AutoCAD DXF, ASCII, CIF, DWG format
Samples handling:
Able to handle small samples with random geometry
2 inch wafer holder
Working stage:
Computer controlled X, Y, Z stage
Stage displacements range: 50mm x 50mm (X x Y) or larger
X, Y position resolution: 2nm or less
Rotation(360 degree)-tilt(90 degree) function for inspection purposes
Other features:
Additional software licence
Secondary electron imaging resolution over 1keV -30keV accelerating voltage: 2nm or better
Retroaction system for sample height variation detection and self adjustment
Vibration mitigation/isolation/cancellation system
Integrated metrology tool
Power surge protection
Detector for imaging and alignment mark recognition
Load lock
Automated height Sensing
Able to register alignment coordinates prior to resist coating using in situ microscopy
Integrated system (e-beam, stage) preference
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BID DOCUMENTS
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AMENDMENTS
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